2024年3月30日发(作者：)

FDN360P

May 2003

FDN360P

Single P-Channel, PowerTrench

®

MOSFET

General Description

This P-Channel Logic Level MOSFET is produced

using Fairchild Semiconductor advanced Power Trench

process that has been especially tailored to minimize

the on-state resistance and yet maintain low gate

charge for superior switching performance.

These devices are well suited for low voltage and

battery powered applications where low in-line power

loss and fast switching are required.

Features

• –2 A, –30 V. R

DS(ON)

= 80 mΩ @ V

GS

= –10 V

R

DS(ON)

= 125 mΩ @ V

GS

= –4.5 V

• Low gate charge (6.2 nC typical)

• High performance trench technology for extremely

low R

DS(ON)

.

• High power version of industry Standard SOT-23

package. Identical pin-out to SOT-23 with 30%

higher power handling capability.

D

D

S

SuperSOT -3

TM

G

GS

A

o

Absolute Maximum Ratings

T=25C unless otherwise noted

Symbol

V

DSS

V

GSS

I

D

P

D

T

J

, T

STG

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current – Continuous

– Pulsed

(Note 1a)

(Note 1b)

(Note 1a)

Ratings

–30

±20

–2

–10

0.5

0.46

–55 to +150

Units

V

V

A

W

°C

Power Dissipation for Single Operation

Operating and Storage Junction Temperature Range

Thermal Characteristics

R

θJA

R

θJC

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

250

75

°C/W

°C/W

Package Marking and Ordering Information

Device Marking

360

Device

FDN360P

Reel Size

7’’

Tape width

8mm

Quantity

3000 units

©2003 Fairchild Semiconductor Corporation

FDN360P Rev F1 (W)

FDN360P

Electrical Characteristics

Symbol

BV

DSS

∆BV

DSS

∆T

J

I

DSS

I

GSSF

I

GSSR

T

A

= 25°C unless otherwise noted

Parameter

Drain–Source Breakdown Voltage

Breakdown Voltage Temperature

Coefficient

Zero Gate Voltage Drain Current

Gate–Body Leakage, Forward

Gate–Body Leakage, Reverse

(Note 2)

Test Conditions

V

GS

= 0 V, I

D

= –250 µA

I

D

= –250 µA, Referenced to 25°C

V

DS

= –24V,

V

GS

= 20 V,

V

GS

= 0 V

V

DS

= 0 V

Min Typ Max Units

–30

–22

–1

–10

100

–100

V

mV/°C

µA

nA

nA

Off Characteristics

V

DS

= –24V, V

GS

= 0 V, T

J

=55°C

V

GS

= –20 V, V

DS

= 0 V

On Characteristics

V

GS(th)

∆V

GS(th)

∆T

J

R

DS(on)

Gate Threshold Voltage

Gate Threshold Voltage

Temperature Coefficient

Static Drain–Source

On–Resistance

On–State Drain Current

Forward Transconductance

V

DS

= V

GS

, I

D

= –250 µA

I

D

= –250 µA, Referenced to 25°C

V

GS

= –10 V, I

D

= –2 A

V

GS

= –10 V, I

D

= –2 A, T

J

=125°C

V

GS

= –4.5 V, I

D

= –1.5A

V

GS

= –10 V,

V

DS

= –5 V,

V

DS

= –5 V

I

D

= –2 A

–1

–1.9

4

63

90

100

5

–3

80

136

125

V

mV/°C

mΩ

I

D(on)

g

FS

–10

A

S

Dynamic Characteristics

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

I

S

V

SD

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

(Note 2)

V

DS

= –15 V,

f = 1.0 MHz

V

GS

= 0 V,

298

83

39

pF

pF

pF

Switching Characteristics

Turn–On Delay Time

Turn–On Rise Time

Turn–Off Delay Time

Turn–Off Fall Time

Total Gate Charge

Gate–Source Charge

Gate–Drain Charge

V

DD

= –15 V,

V

GS

= –10 V,

I

D

= –1 A,

R

GEN

= 6 Ω

6

13

11

6

6.2

1

1.2

12

23

20

12

9

ns

ns

ns

ns

nC

nC

nC

V

DS

= –15V,

V

GS

= –10 V

I

D

= –3.6 A,

Drain–Source Diode Characteristics and Maximum Ratings

Maximum Continuous Drain–Source Diode Forward Current

Drain–Source Diode Forward

V

GS

= 0 V, I

S

= –0.42 A

(Note 2)

Voltage

–0.8

–0.42

–1.2

A

V

Notes:

1. R

θJA

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

the drain pins. R

θJC

is guaranteed by design while R

θCA

is determined by the user's board design.

a) 250°C/W when mounted on a

0.02 in

2

pad of 2 oz. copper.

b) 270°C/W when mounted on a

minimum pad.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

FDN360P Rev F1 (W)

FDN360P

Typical Characteristics

15

R

D

S

(

O

N

)

,

N

O

R

M

A

L

I

Z

E

D

D

R

A

I

N

-

S

O

U

R

C

E

O

N

-

R

E

S

I

S

T

A

N

C

E

V

GS

= -10V

-6.0V

-5.0V

V

-

I

D

,

D

R

A

I

N

C

U

R

R

E

N

T

(

A

)

12

2

-4.5V

1.8

1.6

1.4

V

GS

= -3.5V

9

-4.0V

-4.0V

1.2

1

0.8

0.6

0.4

03691215

-I

D

, DRAIN CURRENT (A)

6

-4.5V

-5.0V

-6.0V

-7.0V

-10V

-3.5V

3

-3.0V

0

012345

-V

DS

, DRAIN TO SOURCE VOLTAGE (V)

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

0.3

R

D

S

(

O

N

)

,

O

N

-

R

E

S

I

S

T

A

N

C

E

(

O

H

M

)

1.6

R

D

S

(

O

N

)

,

N

O

R

M

A

L

I

Z

E

D

D

R

A

I

N

-

S

O

U

R

C

E

O

N

-

R

E

S

I

S

T

A

N

C

E

I

D

= -2A

V

GS

= -10V

1.4

I

D

= -1A

0.25

1.2

0.2

T

A

= 125

o

C

0.15

1

0.8

0.1

T

A

= 25

o

C

0.6

-50-25

o

0.05

125150

246810

T

J

, JUNCTION TEMPERATURE (C)

-V

GS

, GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation with

Temperature.

10

-

I

S

,

R

E

V

E

R

S

E

D

R

A

I

N

C

U

R

R

E

N

T

(

A

)

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

10

V

DS

= -5.0V

-

I

D

,

D

R

A

I

N

C

U

R

R

E

N

T

(

A

)

8

T

A

= -55C

o

25

o

C

125

o

C

V

GS

= 0V

1

T

A

= 125

o

C

0.16

25

o

C

0.014

-55

o

C

20.001

0

12345

-V

GS

, GATE TO SOURCE VOLTAGE (V)

0.0001

00.20.40.60.811.2

-V

SD

,

BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDN360P Rev F1 (W)

FDN360P

Typical Characteristics

10

-

V

G

S

,

G

A

T

E

-

S

O

U

R

C

E

V

O

L

T

A

G

E

(

V

)

I

D

= -3.6A

8

V

DS

= -5V

-15V

6

-10V

400

C

ISS

f = 1 MHz

V

GS

= 0 V

C

A

P

A

C

I

T

A

N

C

E

(

p

F

)

300

200

C

OSS

4

2

100

C

RSS

0

01234567

Q

g

, GATE CHARGE (nC)

0

-V

DS

, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics.

100

Figure 8. Capacitance Characteristics.

20

P

(

p

k

)

,

P

E

A

K

T

R

A

N

S

I

E

N

T

P

O

W

E

R

(

W

)

SINGLE PULSE

R

θ

JA

= 270°C/W

T

A

= 25°C

-

I

D

,

D

R

A

I

N

C

U

R

R

E

N

T

(

A

)

10

R

DS(ON)

LIMIT

100µs

1ms

10ms

100ms

1s

V

GS

= -10V

SINGLE PULSE

R

θ

JA

=270

o

C/W

T

A

= 25

o

C

DC

10

µ

s

15

1

10

0.1

5

0.01

0.1110100

-V

DS

, DRAIN-SOURCE VOLTAGE (V)

0

0.0010.010.11

t

1

, TIME (sec)

101001000

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

Power Dissipation.

r

(

t

)

,

N

O

R

M

A

L

I

Z

E

D

E

F

F

E

C

T

I

V

E

T

R

A

N

S

I

E

N

T

T

H

E

R

M

A

L

R

E

S

I

S

T

A

N

C

E

1

D = 0.5

0.2

0.1

0.1

0.05

0.02

R

θJA

(t) = r(t) + R

θJA

R

θ

JA

= 270 °C/W

P(pk)

t

1

t

2

T

J

- T

A

= P * R

θJA

(t)

Duty Cycle, D = t

1

/ t

2

0.01

0.01

SINGLE PULSE

0.001

0.00010.0010.010.1

t

1

, TIME (sec)

1101001000

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1b.

Transient thermal response will change depending on the circuit board design.

FDN360P Rev F1 (W)

TRADEMARKS

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not intended to be an exhaustive list of all such trademarks.

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