2024年5月10日发(作者：)

DMN2004VK

COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Green

Features

• Low On-Resistance

• Low Gate Threshold Voltage V

GS(th)

<1V

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Complementary Pair MOSFET

• Ultra-Small Surface Mount Package

• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

• ESD Protected Gate

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT-563

• Case Material: Molded Plastic, “Green” Molding

Compound. UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020C

• Terminal Connections: See Diagram

• Terminals: Finish – Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

e3

• Weight: 0.006 grams (approximate)

SOT-563

D

1

G

2

S

2

Q

1

Q

2

ESD protected

TOP VIEW

BOTTOM VIEW

S

1

G

1

D

2

TOP VIEW

Internal Schematic

Ordering Information

(Note 4)

Part Number

DMC2004VK-7

Notes:

Case

SOT-563

Packaging

3000/Tape & Reel

1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.

2. See for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at /datasheets/.

Marking Information

CAB = Product Type Marking Code

YM = Date Code Marking

Y = Year ex: U = 2007

M = Month ex: 9 = September

Date Code Key

Year 2007 2008 2009 2010 2011 2012

Code U V W X Y Z

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

DMC2004VK

/

Document number: DS30925 Rev. 5 - 2

1 of 9

July 2012

© Diodes Incorporated

DMN2004VK

Maximum Ratings N-CHANNEL – Q

1

(@T

A

= +25°C, unless otherwise specified.)

Drain Source Voltage

Gate-Source Voltage

Drain Current (Note 5)

Characteristic Symbol Value Unit

20 V

V

DSS

V

±8

V

GSS

T

A

= +25°C

670

mA

I

D

480

T

A

= +85°C

Maximum Ratings P-CHANNEL – Q

2

(@T

A

= +25°C, unless otherwise specified.)

Drain Source Voltage

Gate-Source Voltage

Drain Current (Note 5)

Characteristic Symbol Value Unit

-20 V

V

DSS

V

±8

V

GSS

T

A

= +25°C

-530

mA

I

D

-380

T

A

= +85°C

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 5)

400 mW

P

D

312.5

Thermal Resistance, Junction to Ambient (Note 5)

°C/W

R

θ

JA

Operating and Storage Temperature Range

Note:

5. Device mounted on FR-4 PCB.

T

j

, T

STG

-65 to +150

°C

Electrical Characteristics N-CHANNEL – Q

1

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Source Leakage

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance

Diode Forward Voltage (Note 6)

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Reverse Transfer Capacitance

Notes: 6. Short duration pulse test used to minimize self-heating effect.

Min Typ Max Unit Test Condition

20

⎯

⎯

0.5

⎯

⎯

⎯

200

0.5

⎯

⎯

⎯

⎯

⎯

⎯

⎯

⎯

0.4

0.5

0.7

⎯

⎯

⎯

⎯

⎯

⎯

V

⎯

1.0 µA

µA

± 1.0

V

GS

= 0V, I

D

= 10µA

V

DS

= 16V, V

GS

= 0V

V

GS

= ±4.5V, V

DS

= 0V

BV

DSS

I

DSS

I

GSS

V

GS(th)

R

DS (ON)

|Y

fs

|

V

SD

C

iss

C

oss

C

rss

C

rss

1.0 V

V

DS

= V

GS

, I

D

= 250µA

V

GS

= 4.5V, I

D

= 540mA

0.55

0.70

Ω

V

GS

= 2.5V, I

D

= 500mA

0.90

V

GS

= 1.8V, I

D

= 350mA

mS

⎯

V

DS

=10V, I

D

= 0.2A

1.2 V

V

GS

= 0V, I

S

= 115mA

150 pF

25 pF

V

DS

= 16V, V

GS

= 0V

f = 1.0MHz

20 pF

20 pF

DMC2004VK

/

Document number: DS30925 Rev. 5 - 2

2 of 9

July 2012

© Diodes Incorporated