2024年6月2日发(作者：)
Si7617DN
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
-30
R
DS(on)
(Ω)
0.0123 at V
GS
= -10 V
0.0222 at V
GS
= -4.5 V
I
D
(A)
d, g
-35
-35
Q
g
(TYP.)
20.5 nC
FEATURES
•TrenchFET
®
power MOSFET
•100 % R
g
and UIS tested
•Material categorization:
for definitions of compliance please see
/doc?99912
PowerPAK
®
1212-8 Single
D
D
8
D
7
D
6
5
APPLICATIONS
•Notebook battery charging
•Notebook adapter switch
G
S
3
.
3
m
m
1
Top View
3
.
3
m
m
1
2
S
3
S
4
S
G
Bottom View
Ordering Information:
Si7617DN-T1-GE3 (Lead (Pb)-free and halogen-free)
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
Continuous Drain Current (T
J
= 150 °C)
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
T
C
= 25 °C
T
A
= 25 °C
L = 0.1 mH
T
C
= 25 °C
Maximum Power Dissipation
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
e, f
T
J
, T
stg
P
D
I
DM
I
S
I
AS
E
AS
I
D
V
DS
V
GS
-30
± 25
-35
d
-35
d
-13.9
a, b
-11.1
a, b
-60
-35
d
-3
a, b
-29
42
52
33
3.7
a, b
2.4
a, b
-55 to +150
260
°C
W
mJ
A
V
ARAMETER SYMBOL LIMIT UNIT
THERMAL RESISTANCE RATINGS
ARAMETER SYMBOL PTYICAL MAXIMUM UNIT
Maximum Junction-to-Ambient
a, c
Maximum Junction-to-Case
t ≤ 10 s
Steady State
R
thJA
R
thJC
26
1.9
33
2.4
°C/W
Notes
e mounted on 1" x 1" FR4 board.
b.t = 10 s.
m under steady state conditions is 81 °C/W.
e limited.
solder profile (/doc?73257
). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
conditions: manual soldering with a soldering iron is not recommended for leadless components.
on T
C
= 25 °C.
S15-1032-Rev. B, 04-May-15
1
For technical questions, contact: **************************
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?91000
Document Number: 65164
Si7617DN
Vishay Siliconix
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode
Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= -11.1 A, dI/dt = 100 A/μs,
T
J
= 25 °C
I
S
= -11.1 A, V
GS
= 0 V
T
C
= 25 °C-
-
-
-
-
-
-
-
-
-0.8
33
30
18
16
-35
-60
-1.2
50
45
-
-
V
ns
nC
ns
A
C
iss
V
DS
= -15 V, V
GS
= 0 V, f = 1 MHzC
oss
C
rss
Q
g
Q
gs
R
g
t
d(on)
V
DD
= -15 V, R
L
= 1.35 Ω
I
D
≅ -11.1 A, V
GEN
= -10 V, R
g
= 1 Ω
t
d(off)
t
f
t
d(on)
V
DD
= -15 V, R
L
= 1.35 Ω
I
D
≅ -11.1 A, V
GEN
= -4.5 V, R
g
= 1 Ω
t
d(off)
t
f
t
r
t
r
V
DS
= -15 V, V
GS
= -10 V, I
D
= -13.9 A
V
DS
= -15 V, V
GS
= -4.5 V, I
D
= -13.9 A
f = 1 MHz
-
-
-
-
-
-
-
0.4
-
-
-
-
-
-
-
-
1800
370
312
39
20.5
6
11
2
11
9
32
9
40
43
30
11
-
-
-
59
31
-
-
4
22
18
50
18
60
65
45
22
ns
Ω
nC
pF
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= -250 μA
I
D
= -250 μA
V
DS
= V
GS
, I
D
= -250 μA
V
DS
= 0 V, V
GS
= ± 25 V
V
DS
= -30 V, V
GS
= 0 V
V
DS
= -30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥ -10 V, V
GS
= -10 V
V
GS
= -10 V, I
D
= -13.9 A
V
GS
= -4.5 V, I
D
= -10.3 A
V
DS
= -15 V, I
D
= -13.9 A
-30
-
-
-1.2
-
-
-
-30
-
-
-
-
-25
4.7
-
-
-
-
-
0.0103
0.0185
35
-
-
-
-2.5
± 100
-1
-5
-
0.0123
0.0222
-
V
mV/°C
V
nA
μA
A
Ω
S
ARAMETER SYMBOL TEST CONDITIONS PMIN.
Q
gd
Notes
test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
teed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-1032-Rev. B, 04-May-15
2
For technical questions, contact: **************************
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?91000
Document Number: 65164
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