2024年3月28日发(作者：)

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4AM14

Silicon N-Channel/P-Channel Complementary Power MOS FET

Array

November 1996

Application

High speed power switching

Features

•

Low on-resistance

N-channel: R

DS(on)

² 0.17 ½, V

GS

= 10 V, I

D

= 4 A

P-channel: R

DS(on)

² 0.2 ½, V

GS

= –10 V, I

D

= –4 A

•

Capable of 4 V gate drive

•

Low drive current

•

High speed switching

•

High density mounting

•

Suitable for H-bridged motor driver

•

Discrete packaged devices of same die

N-channel: 2SK970 (TO-220AB), 2SK1093 (TO-220FM)

P-channel: 2SJ172 (TO-220AB), 2SJ175 (TO-220FM)

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4AM14

Outline

SP-12TA

2