2024年4月29日发(作者：)

Description

The AP5N50D is silicon N-channel Enhanced

VDMOSFETs, is obtained by the self-aligned planar Technology

which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. The transistor

can be used in various power switching circuit for system

miniaturization and higher efficiency.

AP5N50D

500V N-Channel Enhancement Mode MOSFE

General Features

VDS =500V,ID =5A

RDS(ON) <2.0Ω@ VGS=10V

Application

HID

Package Marking and Ordering Information

Product ID

AP5N50D

Pack

TO-252-3L

Marking

AP5N50D XXX YYYY

Qty(PCS)

2500

Absolute Maximum Ratings T

C

= 25ºC, unless otherwise noted

Symbol

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AS

E

AR

P

D

T

J

, T

stg

R

thJC

R

thJA

Parameter

Drain-Source Voltage (V

GS

= 0V)

Continuous Drain Current

Pulsed Drain Current

Gate-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Power Dissipation (T

C

= 25ºC)

Operating Junction and Storage Temperature Range

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

Value

500

5

20

±30

90

3

10

45

-55~+150

4.1

60

ºC/W

Unit

V

A

A

V

mJ

A

mJ

W

ºC

1

AP5N50D Rve1.0 臺灣永源微電子科技有限公司

AP5N50D

Min.

Typ.

Max.

Unit

500

570

--

--

3.0

--

--

--

--

--

--

--

--

1.7

462

54.2

8.8

13.5

2

6

10

25

40

52

--

--

--

220

3

--

1

±100

4.0

2

--

--

--

--

--

--

--

--

--

--

5

20

1.4

--

--

A

V

ns

μC

ns

nC

pF

V

μA

nA

V

Ω

500V N-Channel Enhancement Mode MOSFE

Electrical Characteristics (T

A

=25℃unless otherwise noted)

Symbol

Test Conditions

Parameter

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

R

DS(on)

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

I

S

I

SM

V

SD

t

rr

Q

rr

Notes

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. I

AS

= 3A, V

DD

= 50V, R

G

= 25 Ω, Starting T

J

= 25 ºC

3. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1%

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Source Leakage

Gate-Source Threshold Voltage

Drain-Source On-Resistance (Note3)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-on Delay Time

Turn-on Rise Time

Turn-off Delay Time

Turn-off Fall Time

Continuous Body Diode Current

Pulsed Diode Forward Current

Body Diode Voltage

Reverse Recovery Time

Reverse Recovery Charge

V

GS

= 0V,I

S

= 5.0A,

di

F

/dt =100A /μs

T

C

= 25 ºC

T

J

= 25ºC, I

SD

= 5.0A, V

GS

= 0V

V

DD

= 250V, I

D

=

5A, R

G

= 25 Ω

V

DD

= 400V, I

D

= 5A,

V

GS

= 10V

V

GS

= 0V, I

D

= 250µA

V

DS

= 500V, V

GS

= 0V, T

J

= 25ºC

V

GS

= ±30V

V

DS

= V

GS

, I

D

= 250µA

V

GS

= 10V, I

D

= 2.5A

V

GS

= 0V,

V

DS

=

25V, f =

1.0MHz

--

--

--

--

--

--

--

--

--

--

--

2

AP5N50D Rve1.0 臺灣永源微電子科技有限公司