2024年3月28日发(作者：)

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AO4407A

P-Channel Enhancement Mode Field Effect Transistor

General Description

The AO4407A uses advanced trench technology to

provide excellent R

DS(ON)

, and ultra-low low gate charge

with a 25V gate rating. This device is suitable for use as

a load switch or in PWM applications. Standard Product

AO4407A is Pb-free (meets ROHS & Sony 259

specifications).

Features

V

DS

= -30V

I

D

= -12A (V

GS

= -10V)

R

DS(ON)

< 11mΩ (V

GS

= -20V)

R

DS(ON)

< 13mΩ (V

GS

= -10V)

R

DS(ON)

< 38mΩ (V

GS

= -10V)

UIS TESTED!

RG, CISS, COSS, CRSS TESTED!

SOIC-8

Top View

S

S

S

G

D

D

D

D

G

D

S

Absolute Maximum Ratings T

A

=25°C unless otherwise noted

ParameterSymbol

10 SecSteady State

V

DS

Drain-Source Voltage-30

V

GS

±25

Gate-Source Voltage

Continuous Drain

Current

A

Pulsed Drain Current

Avalanche Current

G

Repetitive avalanche energy L=0.3mH

Power Dissipation

A

T

A

=25°C

T

A

=70°C

G

B

Units

V

V

T

A

=25°C

T

A

=70°C

I

D

I

DM

I

AR

E

AR

P

D

T

J

, T

STG

-12

-10

-60

26

101

3.1

2.0

-55 to 150

-9.2

-7.4

A

mJ

1.7

1.1

W

°C

Junction and Storage Temperature Range

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient

A

Maximum Junction-to-Ambient

A

Maximum Junction-to-Lead

C

Symbol

t ≤ 10s

Steady State

Steady State

R

θJA

R

θJL

Typ

32

60

17

Max

40

75

24

Units

°C/W

°C/W

°C/W

Alpha & Omega Semiconductor,

元器件交易网

AO4407A

Electrical Characteristics (T

J

=25°C unless otherwise noted)

Parameter

Symbol

STATIC PARAMETERS

BV

DSS

Drain-Source Breakdown Voltage

I

DSS

I

GSS

V

GS(th)

I

D(ON)

Zero Gate Voltage Drain Current

Gate-Body leakage current

Gate Threshold Voltage

On state drain current

Conditions

I

D

= -250µA, V

GS

= 0V

V

DS

= -30V, V

GS

= 0V

T

J

= 55°C

V

DS

= 0V, V

GS

= ±25V

V

DS

= V

GS

I

D

= -250µA

V

GS

= -10V, V

DS

= -5V

V

GS

= -20V, I

D

= -12A

R

DS(ON)

Static Drain-Source On-Resistance

T

J

=125°C

V

GS

= -10V, I

D

= -12A

V

GS

= -5V, I

D

= -10A

g

FS

V

SD

I

S

Forward TransconductanceV

DS

= -5V, I

D

= -10A

I

S

= -1A,V

GS

= 0V

Diode Forward Voltage

Maximum Body-Diode Continuous Current

-1.7

-60

8.5

11.5

10

27

21

-0.7-1

-3

2060

V

GS

=0V, V

DS

=-15V, f=1MHz

V

GS

=0V, V

DS

=0V, f=1MHz

370

295

2.4

30

V

GS

=-10V, V

DS

=-15V, I

D

=-12A

4.6

10

11

V

GS

=-10V, V

DS

=-15V, R

L

=1.25Ω,

R

GEN

=3Ω

I

F

=-12A, dI/dt=100A/µs

9.4

24

12

30

22

40

3.6

39

2600

11

15

13

38

S

V

A

pF

pF

pF

Ω

nC

nC

nC

ns

ns

ns

ns

ns

nC

mΩ

-2.3

Min

-30

-10

-50

±100

-3

TypMaxUnits

V

µA

nA

V

A

DYNAMIC PARAMETERS

C

iss

Input Capacitance

C

oss

Output Capacitance

C

rss

R

g

Reverse Transfer Capacitance

Gate resistance

SWITCHING PARAMETERS

Q

g

Total Gate Charge

Q

gs

Gate Source Charge

Q

gd

t

D(on)

t

r

t

D(off)

t

f

t

rr

Q

rr

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

I

F

=-12A, dI/dt=100A/µs

A: The value of R

θJA

is measured with the device mounted on 1 in

2

FR-4 board with 2oz. Copper, in a still air environment with T

A

= 25°C. The

value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance

rating.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R

θJA

is the sum of the thermal impedence from junction to lead R

θJL

and lead to ambient.

D. The static characteristics in Figures 1 to 6 are obtained using < 300µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in

2

FR-4 board with 2oz. Copper, in a still air environment with T

A

=25°C. The SOA

curve provides a single pulse rating.

F. The current rating is based on the t ≤ 10s thermal resistance rating.

G. E

AR

and I

AR

ratings are based on low frequency and duty cycles to keep T

j

=25C.

Rev3: Jan 2008

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor,

元器件交易网

AO4407A

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

80

-10V

-6V

60

-5V

)

A

(

-4.5V

D

40

I

-

-4V

20

V

GS

= -3.5V

0

012345

-V

DS

(Volts)

Figure 1: On-Region Characteristics

40

V

GS

=-5V

30

)

Ω

m

(

)

N

20

(

O

S

D

R

V

GS

=-10V

10

V

GS

=-20V

0

048

I

12

F

=-6.5A, dI/dt=100A/

1620

-I

D

(A)

Figure 3: On-Resistance vs. Drain Current and

Gate Voltage

30

I

D

=-12A

25

)

Ω

m

20

(

)

N

125°C

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

(

O

S

D

15

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

R

25°C

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

10

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

5

345678910

-V

GS

(Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage

Alpha & Omega Semiconductor, Ltd.

80

V

DS

= -5V

60

D

40

125°C

20

25°C

0

00.511.522.533.544.55

-V

GS

(Volts)

Figure 2: Transfer Characteristics

1.6

V

GS

=-20V

I

D

=-12A

1.4

V

GS

=-10V

I

D

=-12A

1.2

V

1.0

GS

=-5V

I

D

=-10A

0.8

5150175

Temperature (°C)

Figure 4: On-Resistance vs. Junction

Temperature

1E+01

1E+00

1E-01

125°C

1E-02

S

1E-03

25°C

1E-04

1E-05

1E-06

0.00.20.40.60.81.01.2

-V

SD

(Volts)

Figure 6: Body-Diode Characteristics

-

I

(

A

)

N

o

r

m

a

l

i

z

e

d

O

n

-

R

e

s

i

s

t

a

n

c

e

µs

-

I

(

A

)

元器件交易网

AO4407A

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10

8

-

V

G

S

(

V

o

l

t

s

)

6

4

2

0

Q

g

(nC)

Figure 7: Gate-Charge Characteristics

V

DS

=-15V

I

D

=-12A

3000

2500

C

iss

C

a

p

a

c

i

t

a

n

c

e

(

p

F

)

2000

1500

1000

500

C

rss

0

-V

DS

(Volts)

Figure 8: Capacitance Characteristics

C

oss

100

10µs

10

-

I

D

(

A

m

p

s

)

100µs

1000

T

J(Max)

=150°C

T

A

=25°C

1

R

DS(ON)

limited

10ms

100ms

P

o

w

e

r

(

W

)

1ms

100

0.1

T

J(Max)

=150°C

T

A

=25°C

10

10s

DC

1

0.01

0.1

I

F

=-6.5A, dI/dt=100A/µs

10100

-V

DS

(Volts)

1

0.00001

Figure 9: Maximum Forward Biased Safe

Operating Area (Note E)

0.1101000

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junction-

to-Ambient (Note E)

0.001

10

Z

θ

J

A

N

o

r

m

a

l

i

z

e

d

T

r

a

n

s

i

e

n

t

T

h

e

r

m

a

l

R

e

s

i

s

t

a

n

c

e

1

D=T

on

/T

T

J,PK

=T

A

+P

DM

.Z

θJA

.R

θJA

R

θJA

=75°C/W

In descending order

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

0.1

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

P

D

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

0.01

T

on

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

T

Single Pulse

0.001

0.000010.00010.0010.010.

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance(Note E)

Alpha & Omega Semiconductor,