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F

Q

P

F

1

N

6

0

April 2000

FQPF1N60

600V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switch mode power supply.

QFET

Features

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•

•

•

•

•

0.9A, 600V, R

DS(on)

= 11.5

Ω

@V

GS

= 10 V

Low gate charge ( typical 5.0 nC)

Low Crss ( typical 3.0 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

TM

D

!

"

G

!

GD

S

!

"

"

"

TO-220F

FQPF Series

!

S

Absolute Maximum Ratings