2024年5月10日发(作者：)
AO3400
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3400 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in PWM
applications. Standard Product AO3400 is Pb-free
(meets ROHS & Sony 259 specifications). AO3400L
is a Green Product ordering option. AO3400 and
AO3400L are electrically identical.
Features
V
DS
(V) = 30V
I
D
= 5.8 A (V
GS
= 10V)
R
DS(ON)
< 28mΩ (V
GS
= 10V)
R
DS(ON)
< 33mΩ (V
GS
= 4.5V)
R
DS(ON)
< 52mΩ (V
GS
= 2.5V)
TO-236
(SOT-23)
Top View
G
D
S
G
D
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
T
A
=25°C
A
Current
T
A
=70°C
B
Pulsed Drain Current
T
A
=25°C
Power Dissipation
A
Maximum
30
±12
5.8
4.9
30
1.4
1
-55 to 150
Units
V
V
A
V
GS
I
D
I
DM
P
D
T
J
, T
STG
T
A
=70°C
W
°CJunction and Storage Temperature Range
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
C
Maximum Junction-to-Lead
Symbol
t ≤ 10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
65
85
43
Max
90
125
60
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AO3400
Electrical Characteristics (T
J
=25°C unless otherwise noted)
SymbolParameterConditions
I
D
=250µA, V
GS
=0V
V
DS
=24V, V
GS
=0V
T
J
=55°C
V
DS
=0V, V
GS
=±12V
V
DS
=V
GS
I
D
=250µA
V
GS
=4.5V, V
DS
=5V
V
GS
=10V, I
D
=5.8A
R
DS(ON)
Static Drain-Source On-Resistance
T
J
=125°C
V
GS
=4.5V, I
D
=5A
V
GS
=2.5V, I
D
=4A
g
FS
V
SD
I
S
Forward TransconductanceV
DS
=5V, I
D
=5A10
I
S
=1A,V
GS
=0VDiode Forward Voltage
Maximum Body-Diode Continuous Current
0.7
30
22.8
32
27.3
43.3
15
0.711
2.5
823
V
GS
=0V, V
DS
=15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
99
77
1.2
9.7
V
GS
=4.5V, V
DS
=15V, I
D
=5.8A
1.6
3.1
3.3
V
GS
=10V, V
DS
=15V, R
L
=2.7Ω,
R
GEN
=3Ω
I
F
=5A, dI/dt=100A/µs
4.8
26.3
4.1
16
8.9
5
7
40
6
20
12
3.6
12
1030
28
39
33
52
1.1
Min
30
1
5
100
1.4
TypMaxUnits
V
µA
nA
V
A
mΩ
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
ns
nC
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
R
g
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Q
g
Total Gate Charge
Q
gs
Gate Source Charge
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
I
F
=5A, dI/dt=100A/µs
2
A: The value of R
θJA
is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
2
E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
SOA curve provides a single pulse rating.
Rev 4 : June 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO3400
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
10V
3V
20
4.5V
15
2.5V
)
(
A
D
I
10
V
GS
=2V
5
0
012345
V
DS
(Volts)
Fig 1: On-Region Characteristics
60
50
)
Ω
m
40
V
GS
=2.5V
(
)
N
O
(
D
S
30
R
V
GS
=4.5V
20
V
GS
=10V
10
05101520
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
70
60
I
D
=5A
)
50
Ω
m
125°C
(
)
N
40
O
(
D
S
R
30
20
25°C
10
0246810
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
20
16
V
DS
=5V
12
)
(
A
D
I
8
125°C
25°C
4
0
00.511.522.53
V
GS
(Volts)
Figure 2: Transfer Characteristics
1.8
e
c
n
a
1.6
t
s
i
s
V
GS
=4.5V
e
-
R
1.4
V
n
GS
=10V
O
d
e
z
1.2
V
GS
=2.5V
i
l
a
m
r
o
1
N
0.8
5150175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1.0E+01
1.0E+00
1.0E-01
125°C
)
1.0E-02
(
A
I
S
1.0E-03
25°C
1.0E-04
1.0E-05
1.0E-06
0.00.20.40.60.81.01.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
AO3400
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
4
V
G
S
(
V
o
l
t
s
)
3
2
1
200
0
024681012
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
0
V
DS
(Volts)
Figure 8: Capacitance Characteristics
1400
V
DS
=15V
I
D
=5A
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
1200
1000
800
600
400
C
oss
C
rss
C
iss
100.0
T
J(Max)
=150°C
T
A
=25°C
P
o
w
e
r
(
W
)
100µs
1ms
0.1s
1.0
1s
10s
DC
0.1
0.11
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10100
10ms
40
I
D
(
A
m
p
s
)
R
DS(ON)
10.0
limited
T
J(Max)
=150°C
T
A
=25°C
30
20
10
0
0.0010.010.
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
Z
θ
J
A
N
o
r
m
a
l
i
z
e
d
T
r
a
n
s
i
e
n
t
T
h
e
r
m
a
l
R
e
s
i
s
t
a
n
c
e
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=90°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
T
on
Single Pulse
T
0.01
0.000010.00010.0010.010.
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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