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2024年5月2日发(作者：)

DRV8833

016B–JANUARY2011–REVISEDAUGUST2011

双通道H桥电机驱动器

查询样品:DRV8833

特性

•双通道H桥电流控制电机驱动器

–能够驱动两个直流(DC)电机或一个步进电机

–低MOSFET导通电阻

HS+LS360mΩ

每个H桥的输出电流为1.5-ARMS、2APP（在

=5V和25℃条件下）

产品可以为3-ARMS，

4-A平行峰顶

宽电源电压范围：

2.7V至10.8V

•

PWM绕组电流调节/限制

耐热性能增强型表面贴装式封装

应用

•

电池供电式玩具

POS打印机

视频安保摄像机

办公自动化设备

游戏机

机器人

•

说明

DRV8833为玩具、打印机及其他机电一体化应用提供了一款双通道桥式电机驱动器解决方案。

该器件具有两个H桥驱动器，并能够驱动两个直流(DC)电刷电机、一个双极性步进电机、螺线管或其他电感性负

载。

每个H桥的输出驱动器模块由N沟道功率MOSFET组成，这些MOSFET被配置成一个H桥，以驱动电机绕组。

每个H桥都包括用于调节或限制绕组电流的电路。

借助正确的PCB设计，DRV8833的每个H桥能够连续提供高达1.5-ARMS（或DC）的驱动电流（在25℃和采

用一个5VVM电源时）。每个H桥可支持高达2A的峰值电流。在较低的VM电压条件下，电流供应能力略有下

降。

该器件提供了利用一个故障输出引脚实现的内部关断功能，用于：过流保护、短路保护、欠压闭锁和过热。另外，

还提供了一种低功耗睡眠模式。

DRV8833内置于16引脚HTSSOP封装或采用PowerPAD™的QFN封装（绿色环保：RoHS和无Sb/Br）。

订购信息

(1)

封装

(2)

PowerPAD™(HTSSOP)-PWP

PowerPAD™(QFN)-RTY

(1)

(2)

2000卷带式包装

Tubeof90

3000卷带

卷盘（250片）

可订购部件

号

DRV8833PWPR

DRV8833PWP

DRV8833RTYR

DRV8833RTYT

正面

标记

DRV8833

如需了解最新的封装及订购信息，敬请查看本文档末的“封装选项附录”，或查看TI网站。

封装图样、散热数据和符号可登录/packaging获取。

Pleasebeawarethatanimportantnoticeconcerningavailability,standardwarranty,anduseincriticalapplicationsofTexas

Instrumentssemiconductorproductsanddisclaimerstheretoappearsattheendofthisdatasheet.

PowerPADisatrademarkofTexasInstruments.

PRODUCTIONDATAinformationiscurrentasofpublicationdate.

ProductsconformtospecificationsperthetermsoftheTexas

tionprocessingdoesnot

necessarilyincludetestingofallparameters.

EnglishDataSheet:SLVSAR1

DRV8833

ZHCS016B–JANUARY2011–

DEVICEINFORMATION

FunctionalBlockDiagram

VINT

Internal

Ref&

Regs

2.2uF

10uF

Charge

Pump

VCP

0.01uF

Drives2x DC motor

or1x Stepper

AOUT1

AIN1

AIN2

Gate

Drive

OCP

DCM

Step

Motor

BIN1

BIN2

AOUT2

AISEN

ISEN

Logic

nSLEEP

BOUT1

nFAULT

Gate

Drive

OCP

Over-

Temp

DCM

BOUT2

ISEN

BISEN

GND

DRV8833

016B–JANUARY2011–REVISEDAUGUST2011

ALFUNCTIONS

NAME

(PWP)

(RTY)

I/O

(1)

DESCRIPTION

EXTERNALCOMPONENTS

ORCONNECTIONS

BoththeGNDpinanddevice

PowerPADmustbeconnectedto

ground

Connecttomotorsupply.A10-µF

(minimum)ceramicbypasscapacitorto

GNDisrecommended.

BypasstoGNDwith2.2-μF,6.3-V

capacitor

Connecta0.01-μF,16-V(minimum)

X7RceramiccapacitortoVM

LogicinputcontrolsstateofAOUT1.

Internalpulldown.

LogicinputcontrolsstateofAOUT2.

Internalpulldown.

LogicinputcontrolsstateofBOUT1.

Internalpulldown.

LogicinputcontrolsstateofBOUT2.

Internalpulldown.

Logichightoenabledevice,logiclowto

enterlow-powersleepmodeandreset

alpulldown.

Logiclowwheninfaultcondition

(overtemp,overcurrent)

Connecttocurrentsenseresistorfor

bridgeA,orGNDifcurrentcontrolnot

needed

Connecttocurrentsenseresistorfor

bridgeB,orGNDifcurrentcontrolnot

needed

ConnecttomotorwindingA

ConnecttomotorwindingB

POWERANDGROUND

GND

PPAD

-Deviceground

VINT

VCP

CONTROL

AIN1

AIN2

BIN1

BIN2

nSLEEP

STATUS

nFAULT

OUTPUT

AISEN

Devicepowersupply

Internalsupplybypass

High-sidegatedrivevoltage

BridgeAinput1

BridgeAinput2

BridgeBinput1

BridgeBinput2

Sleepmodeinput

86ODFaultoutput

31IOBridgeAground/Isense

BISEN

AOUT1

AOUT2

BOUT1

BOUT2

(1)

BridgeBground/Isense

BridgeAoutput1

BridgeAoutput2

BridgeBoutput1

BridgeBoutput2

Directions:I=input,O=output,OZ=tri-stateoutput,OD=open-drainoutput,IO=input/output

DRV8833

ZHCS016B–JANUARY2011–

PWP PACKAGE

(TOPVIEW)

nSLEEP

AOUT1

AISEN

AOUT2

BOUT2

BISEN

BOUT1

nFAULT

GND

(PPAD)

AIN1

AIN2

VINT

GND

VCP

BIN2

BIN1

RTY PACKAGE

(TOPVIEW)

AISEN

AOUT2

BOUT2

BISEN

GND

(PPAD)

VINT

GND

VCP

DRV8833

016B–JANUARY2011–REVISEDAUGUST2011

ABSOLUTEMAXIMUMRATINGS

(1)(2)

VALUE

VMPowersupplyvoltagerange

Digitalinputpinvoltagerange

xISENpinvoltage

Peakmotordriveoutputcurrent

stg

(1)

(2)

Operatingjunctiontemperaturerange

Storagetemperaturerange

–0.3to11.8

–0.5to7

–0.3to0.5

Internallylimited

–40to150

–60to150

UNIT

°C

Stressesbeyondthoselistrestressratings

only,andfunctionaloperationofthedeviceattheseoranyotherconditionsbeyondthoseindicatedunderrecommendedoperating

retoabsolute–maximum–ratedconditionsforextendedperiodsmayaffectdevicereliability.

Allvoltagevaluesarewithrespecttonetworkgroundterminal.

THERMALINFORMATION

THERMALMETRIC

JCtop

JCbot

(1)

(2)

(3)

(4)

(5)

(6)

Junction-to-ambientthermalresistance

(1)

Junction-to-case(top)thermalresistance

(2)

Junction-to-boardthermalresistance

(3)

Junction-to-topcharacterizationparameter

(4)

Junction-to-boardcharacterizationparameter

(5)

Junction-to-case(bottom)thermalresistance

(6)

PWP

16PINS

40.5

32.9

28.8

0.6

11.5

4.8

RTY

16PINS

37.2

34.3

15.3

0.3

15.4

3.5

°C/W

UNITS

Thejunction-to-ambientthermalresistanceundernaturalconvectionisobtainedinasimulationonaJEDEC-standard,high-Kboard,as

specifiedinJESD51-7,inanenvironmentdescribedinJESD51-2a.

Thejunction-to-case(top)thermific

JEDEC-standardtestexists,butaclosedescriptioncanbefoundintheANSISEMIstandardG30-88.

Thejunction-to-boardthermalresistanceisobtainedbysimulatinginanenvironmentwitharingcoldplatefixturetocontrolthePCB

temperature,asdescribedinJESD51-8.

Thejunction-to-topcharacterizationparameter,ψ

,estimatesthejunctiontemperatureofadeviceinarealsystemandisextracted

fromthesimulationdataforobtainingθ

,usingaproceduredescribedinJESD51-2a(sections6and7).

Thejunction-to-boardcharacterizationparameter,ψ

,estimatesthejunctiontemperatureofadeviceinarealsystemandisextracted

fromthesimulationdataforobtainingθ

,usingaproceduredescribedinJESD51-2a(sections6and7).

Thejunction-to-case(bottom)thermalresistanceisobtainedbysimulatingacoldplatetestontheexposed(power)ific

JEDECstandardtestexists,butaclosedescriptioncanbefoundintheANSISEMIstandardG30-88.

RECOMMENDEDOPERATINGCONDITIONS

=25°C(unlessotherwisenoted)

MIN

DIGIN

OUT

(1)

(2)

Motorpowersupplyvoltagerange

(1)

Digitalinputpinvoltagerange

ContinuousRMSorDCoutputcurrentperbridge

(2)

NotethatR

DS(ON)

increasesandmaximumoutputcurrentisreducedatVMsupplyvoltagesbelow5V.

=5V,powerdissipationandthermallimitsmustbeobserved.

2.7

-0.3

NOMMAX

10.8

5.75

1.5

UNIT

DRV8833

ZHCS016B–JANUARY2011–

ELECTRICALCHARACTERISTICS

=25°C(unlessotherwisenoted)

PARAMETER

POWERSUPPLY

VMQ

UVLO

HYS

VMoperatingsupplycurrent

VMsleepmodesupplycurrent

VMundervoltagelockoutvoltage

VMundervoltagelockout

hysteresis

nSLEEP

Allotherpins

nSLEEP

Allotherpins

nSLEEP

AllexceptnSLEEP

VIN=0

VIN=3.3V,nSLEEP

VIN=3.3V,allexceptnSLEEP

6.6

16.5

450

=5mA

=3.3V

=5V,I

=500mA,T

=25°C

HSFETonresistance

DS(ON)

LSFETonresistance

=5V,I

=500mA,T

=85°C

=2.7V,I

=500mA,T

=25°C

=2.7V,I

=500mA,T

=85°C

=5V,I

=500mA,T

=25°C

=5V,I

=500mA,T

=85°C

=2.7V,I

=500mA,T

=25°C

=2.7V,I

=500mA,T

=85°C

OFF

PWM

PROP

DEAD

OCP

DEG

OCP

TSD

(1)

Off-stateleakagecurrent

CurrentcontrolPWMfrequency

Risetime

Falltime

PropagationdelayINxtoOUTx

Deadtime

(1)

TESTCONDITIONS

=5V,xIN1=0V,xIN2=0V

=5V

falling

MINTYP

1.7

1.6

MAX

2.5

2.6

UNIT

μA

mV90

LOGIC-LEVELINPUTS

HYS

DEG

Inputlowvoltage

Inputhighvoltage

Inputhysteresis

Inputpull-downresistance

Inputlowcurrent

Inputhighcurrent

Inputdeglitchtime

Outputlowvoltage

Outputhighleakagecurrent

0.5

0.7

2.5

0.4

500

150

kΩ

μA

0.5

200

325

250

350

160

275

200

300

–1

180

160

1.1

450

23.3

2.25

1.35

Dietemperature150160180

1μA

kHz

µs

°C

mΩ

μA

nFAULTOUTPUT(OPEN-DRAINOUTPUT)

H-BRIDGEFETS

=5V,T

=25°C,V

OUT

=0V

InternalPWMfrequency

=5V,16ΩtoGND,10%to90%V

=5V

MOTORDRIVER

PROTECTIONCIRCUITS

Overcurrentprotectiontriplevel

OCPDeglitchtime

Overcurrentprotectionperiod

Thermalshutdowntemperature

alimplementationisnotnecessary.

DRV8833

016B–JANUARY2011–REVISEDAUGUST2011

ELECTRICALCHARACTERISTICS(continued)

=25°C(unlessotherwisenoted)

PARAMETER

CURRENTCONTROL

TRIP

BLANK

WAKE

xISENtripvoltage

Currentsenseblankingtime

StartuptimenSLEEPinactivehightoH-bridgeon

160200

3.75

240mV

µs

TESTCONDITIONSMINTYPMAXUNIT

SLEEPMODE

DRV8833

ZHCS016B–JANUARY2011–

FUNCTIONALDESCRIPTION

PWMMotorDrivers

DRV8833containsdiagramofthe

circuitryisshownbelow:

OCP

VCP,VINT

xOUT1

xIN1

Pre-

drive

xOUT2

xIN2

PWM

OCP

DCM

xISEN

Optional

REF(200mV)

ontrolCircuitry

BridgeControlandDecayModes

TheAIN1andAIN2inputpinscontrolthestateoftheAOUT1andAOUT2outputs;similarly,theBIN1andBIN2

2showsthelogic.

Table2.H-BridgeLogic

xIN1

xIN2

xOUT1

xOUT2

FUNCTION

Coast/fast

decay

Reverse

Forward

Brake/slow

decay

ntrollingawindingwithPWM,when

thedrivecurrentisinterrupted,theinductivenatureofthemotorrequiresthatthecurrentmustcontinuetoflow.

lethisrecirculationcurrent,theH-bridgecanoperateintwodifferent

states,decaymode,theH-bridgeisdisabledandrecirculationcurrentflows

throughthebodydiodes;inslowdecay,themotorwindingisshorted.

ToPWMusingfastdecay,thePWMsignalisappliedtoonexINpinwhiletheotherisheldlow;touseslow

decay,onexINpinisheldhigh.

trolofMotorSpeed

xIN1

PWM

xIN2

PWM

FUNCTION

ForwardPWM,fastdecay

ForwardPWM,slowdecay

ReversePWM,fastdecay

ReversePWM,slowdecay

DRV8833

016B–JANUARY2011–REVISEDAUGUST2011

Figure2showsthecurrentpathsindifferentdriveanddecaymodes.

VMVM

Forward drive

xOUT1

xOUT2

Fast decay

Slow decay

xOUT1

xOUT2

Reverse drive

Fast decay

Slow decay

FORWARD

odes

REVERSE

CurrentControl

Thecurrentthroughthemotorwindingsmaybelimited,orcontrolled,byafixed-frequencyPWMcurrent

regulation,otors,currentcontrolisusedtolimitthestart-upandstallcurrentofthe

ppermotors,currentcontrolisoftenusedatalltimes.

WhenanH-bridgeisenabled,currentrisesthroughthewindingataratedependentontheDCvoltageand

urrentreachesthecurrentchoppingthreshold,thebridgedisablesthecurrent

atimmediatelyafterthecurrentisenabled,thevoltageonthe

xISENpinisignankingtimeis

fixedat3.75μankingtimealsosetstheminimumontimeofthePWMwhenoperatingincurrent

choppingmode.

ThePWMchoppingcurrentissetbyacomparatorwhichcomparesthevoltageacrossacurrentsenseresistor

erencevoltageisfixedat200mV.

ThechoppingcurrentiscalculatedinEquation1.

CHOP

200

ISENSE

Example:

Ifa1-Ωsenseresistorisused,thechoppingcurrentwillbe200mV/1Ω=200mA.

(1)

Oncethechoppingcurrentthresholdisreached,gcurrentis

ateishelduntilthebeginningofthenext

fixed-frequencyPWMcycle.

Notethatifcurrentcontrolisnotneeded,thexISENpinsshouldbeconnecteddirectlytoground.

DRV8833

ZHCS016B–JANUARY2011–

nSLEEPOperation

state,theH-bridgesaredisabled,the

gatedrivechargepumpisstopped,allinternallogicisreset,utsare

turningfromsleepmode,sometime(upto1ms)needsto

theboarddesignsimple,thenSLEEPcanbe

pulleduptothesupply(VM).sistorlimitsthe

ally,thenSLEEPpinhasa500-kΩ

tsgreaterthan250µAcan

herecommendedpullupresistorwouldbebetween20kΩand

75kΩ.

ProtectionCircuits

TheDRV8833isfullyprotectedagainstundervoltage,overcurrentandovertemperatureevents.

OvercurrentProtection(OCP)

Ananalogcurrentlimitcirc

analogcurrentlimitpersistsforlongerthantheOCPdeglitchtime,allFETsintheH-bridgewillbedisabledand

verwillbere-enabledaftertheOCPretryperiod(t

OCP

)haspassed.

aultconditionisstillpresent,aultisno

longerpresent,notethatonlytheH-bridge

inwhichtheOCPisdetectedwillbedisabledwhiletheotherbridgewillfunctionnormally.

Overcurre,ashorttoground,

supply,atovercurrentprotection

doesnotusethecurrentsensecircuitryusedforPWMcurrentcontrol,sofunctionsevenwithoutpresenceofthe

xISENresistors.

ThermalShutdown(TSD)

Ifthedietemperatureexceedssafelimits,allFETsintheH-bridgewillbedisabledandthenFAULTpinwillbe

edietemperaturehasfallentoasafeleveloperationwillautomaticallyresume.

UndervoltageLockout(UVLO)

IfatanytimethevoltageontheVMpinfallsbelowtheundervoltagelockoutthresholdvoltage,allcircuitryinthe

devicewillbedisabled,ionwillresumewhenVMrisesabovetheUVLO

isdrivenlowintheeventofanundervoltagecondition.

DRV8833

016B–JANUARY2011–REVISEDAUGUST2011

APPLICATIONSINFORMATION

ParallelMode

ThetwoH-bridgesintheDRV8

internaldeadtimeintheDRV8833preventsanyriskofcross-conduction(shoot-through)betweenthetwo

wingbelowshowstheconnections.

elMode

DRV8833

ZHCS016B–JANUARY2011–

THERMALINFORMATION

MaximumOutputCurrent

Inactualoperation,themaximumoutputcurrentachievablewithamotordriverisafunctionofdietemperature.

lly,themaximummotorcurrent

willbetheamountofcurrentthatresultsinapowerdissipationlevelthat,alongwiththethermalresistanceofthe

packageandPCB,keepsthedieatalowenoughtemperaturetostayoutofthermalshutdown.

Thedissipationratingsgiveninthedatasheetcanbeusedasaguidetocalculatetheapproximatemaximum

powerdissipationthatcanbeexpectedtobepossiblewithoutenteringthermalshutdownforseveraldifferent

r,foraccuratedata,theactualPCBdesignmustbeanalyzedviameasurementor

thermalsimulation.

ThermalProtection

TheDRV8833hasthermalshutdown(TSD)ietemperatureexceedsapproximately

150°C,thedevicewillbedisableduntilthetemperaturedropsby45°C.

AnytendencyofthedevicetoenterTSDisanindicationofeitherexcessivepowerdissipation,insufficient

heatsinking,ortoohighanambienttemperature.

PowerDissipation

PowerdissipationintheDRV8833isdominatedbytheDCpowerdissipatedintheoutputFETresistance,or

RDS(ON).ThereisadditionalpowerdissipatedduetoPWMswitchinglosses,whicharedependentonPWM

frequency,riseandfalltimes,witchinglossesaretypicallyontheorderof10%

to30%oftheDCpowerdissipation.

TheDCpowerdissipationofoneH-bridgecanberoughlyestimatedbyEquation2.

TOT

=(HS - R

DS(ON)

OUT(RMS)

) + (LS - R

DS(ON)

OUT(RMS)

)

(2)

whereP

TOT

isthetotalpowerdissipation,HS-R

DS(ON)

istheresistanceofthehighsideFET,LS-R

DS(ON)

isthe

resistanceofthelowsideFET,andI

OUT(RMS)

istheRMSoutputcurrentbeingappliedtothemotor.

NotethatR

DS(ON)

increaseswithtemperature,soasthedeviceheats,st

betakenintoconsiderationwhensizingtheheatsink.

Heatsinking

ThePowerPAD™peroperation,thispad

ti-layerPCBwithagroundplane,

thiscanbeaccompli

withoutinternalplanes,opperarea

isontheoppositesideofthePCBfromthedevice,thermalviasareusedtotransfertheheatbetweentopand

bottomlayers.

FordetailsabouthowtodesignthePCB,refertoTIapplicationreportSLMA002,"PowerPAD™Thermally

EnhancedPackage"andTIapplicationbriefSLMA004,"PowerPAD™MadeEasy",.

Ingeneral,themorecopperareathatcanbeprovided,themorepowercanbedissipated.

PACKAGE OPTION ADDENDUM

11-Apr-2013

PACKAGING INFORMATION

Orderable Device

DRV8833PW

DRV8833PWP

DRV8833PWPR

DRV8833PWR

DRV8833RTYR

DRV8833RTYT

(1)

Status

(1)

Package TypePackagePinsPackage

DrawingQty

TSSOP

HTSSOP

TSSOP

QFN

PWP

RTY

2000

3000

250

Eco Plan

(2)

Lead/Ball Finish

CU NIPDAU

MSL Peak Temp

(3)

Op Temp (°C)

-40 to 85

Top-Side Markings

(4)

Samples

ACTIVE

Green (RoHS

& no Sb/Br)

Green (RoHS

& no Sb/Br)

Green (RoHS

& no Sb/Br)

Green (RoHS

& no Sb/Br)

Green (RoHS

& no Sb/Br)

Green (RoHS

& no Sb/Br)

Level-3-260C-168 HR

8833PW

DRV8833

8833PW

DRV8833

The marketing status values are defined as follows:

ACTIVE: Product device recommended for new designs.

LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.

NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.

PREVIEW: Device has been announced but is not in production. Samples may or may not be available.

OBSOLETE: TI has discontinued the production of the device.

(2)

Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check /productcontent for the latest availability

information and additional product content details.

TBD: The Pb-Free/Green conversion plan has not been defined.

Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that

lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.

Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between

the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.

Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight

in homogeneous material)

(3)

MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

(4)

Multiple Top-Side Markings will be inside parentheses. Only one Top-Side Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a

continuation of the previous line and the two combined represent the entire Top-Side Marking for that device.

Addendum-Page 1

PACKAGE OPTION ADDENDUM

11-Apr-2013

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information

provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and

continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.

TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

Addendum-Page 2

PACKAGEMATERIALSINFORMATION

4-Mar-2013

TAPEANDREELINFORMATION

*Alldimensionsarenominal

DevicePackagePackagePins

TypeDrawing

HTSSOP

TSSOP

QFN

PWP

RTY

SPQReelReelA0

DiameterWidth(mm)

(mm)W1(mm)

330.0

180.0

12.4

6.9

4.25

(mm)

5.6

4.25

(mm)

1.6

1.15

(mm)

8.0

WPin1

(mm)Quadrant

12.0

DRV8833PWPR

DRV8833PWR

DRV8833RTYR

DRV8833RTYT

2000

3000

250

PackMaterials-Page1

PACKAGEMATERIALSINFORMATION

4-Mar-2013

*Alldimensionsarenominal

Device

DRV8833PWPR

DRV8833PWR

DRV8833RTYR

DRV8833RTYT

PackageType

HTSSOP

TSSOP

QFN

PackageDrawing

PWP

RTY

Pins

SPQ

2000

3000

250

Length(mm)

367.0

210.0

Width(mm)

367.0

185.0

Height(mm)

35.0

PackMaterials-Page2

重要声明

德州仪器(TI)及其下属子公司有权根据JESD46最新标准,对所提供的产品和服务进行更正、修改、增强、改进或其它更改，并有权根据

JESD48最新标准中止提供任何产品和服务。客户在下订单前应获取最新的相关信息,并验证这些信息是否完整且是最新的。所有产品的销售

都遵循在订单确认时所提供的TI销售条款与条件。

TI保证其所销售的组件的性能符合产品销售时TI半导体产品销售条件与条款的适用规范。仅在TI保证的范围内，且TI认为有必要时才会使

用测试或其它质量控制技术。除非适用法律做出了硬性规定，否则没有必要对每种组件的所有参数进行测试。

TI对应用帮助或客户产品设计不承担任何义务。客户应对其使用TI组件的产品和应用自行负责。为尽量减小与客户产品和应用相关的风险，

客户应提供充分的设计与操作安全措施。

TI不对任何TI专利权、版权、屏蔽作品权或其它与使用了TI组件或服务的组合设备、机器或流程相关的TI知识产权中授予的直接或隐含权

限作出任何保证或解释。TI所发布的与第三方产品或服务有关的信息，不能构成从TI获得使用这些产品或服务的许可、授权、或认可。使用

此类信息可能需要获得第三方的专利权或其它知识产权方面的许可，或是TI的专利权或其它知识产权方面的许可。

对于TI的产品手册或数据表中TI信息的重要部分，仅在没有对内容进行任何篡改且带有相关授权、条件、限制和声明的情况下才允许进行

复制。TI对此类篡改过的文件不承担任何责任或义务。复制第三方的信息可能需要服从额外的限制条件。

在转售TI组件或服务时，如果对该组件或服务参数的陈述与TI标明的参数相比存在差异或虚假成分，则会失去相关TI组件或服务的所有明

示或暗示授权，且这是不正当的、欺诈性商业行为。TI对任何此类虚假陈述均不承担任何责任或义务。

客户认可并同意，尽管任何应用相关信息或支持仍可能由TI提供，但他们将独力负责满足与其产品及在其应用中使用TI产品相关的所有法

律、法规和安全相关要求。客户声明并同意，他们具备制定与实施安全措施所需的全部专业技术和知识，可预见故障的危险后果、监测故障

及其后果、降低有可能造成人身伤害的故障的发生机率并采取适当的补救措施。客户将全额赔偿因在此类安全关键应用中使用任何TI组件而

对TI及其代理造成的任何损失。

在某些场合中，为了推进安全相关应用有可能对TI组件进行特别的促销。TI的目标是利用此类组件帮助客户设计和创立其特有的可满足适用

的功能安全性标准和要求的终端产品解决方案。尽管如此，此类组件仍然服从这些条款。

TI组件未获得用于FDAClassIII（或类似的生命攸关医疗设备）的授权许可，除非各方授权官员已经达成了专门管控此类使用的特别协议。

只有那些TI特别注明属于军用等级或“增强型塑料”的TI组件才是设计或专门用于军事/航空应用或环境的。购买者认可并同意，对并非指定面

向军事或航空航天用途的TI组件进行军事或航空航天方面的应用，其风险由客户单独承担，并且由客户独力负责满足与此类使用相关的所有

法律和法规要求。

TI已明确指定符合ISO/TS16949要求的产品，这些产品主要用于汽车。在任何情况下，因使用非指定产品而无法达到ISO/TS16949要

求，TI不承担任何责任。

产品

数字音频

放大器和线性器件

数据转换器

DLP®产品

DSP-数字信号处理器

时钟和计时器

接口

逻辑

电源管理

微控制器(MCU)

RFID系统

OMAP应用处理器

无线连通性

/audio

/amplifiers

/dataconverters

/dsp

/clockandtimers

/interface

/logic

/power

/microcontrollers

/rfidsys

/omap

/wirelessconnectivity德州仪器在线技术支持社区

IMPORTANTNOTICE

邮寄地址：上海市浦东新区世纪大道1568号，中建大厦32楼邮政编码：200122

通信与电信

计算机及周边

消费电子

能源

工业应用

医疗电子

安防应用

汽车电子

视频和影像

应用

/telecom

/computer

/consumer-apps

/energy

/industrial

/medical

/security

/automotive

/video

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