2024年5月10日发(作者：)

AP0504GMT-HF

Halogen-Free Product

Advanced Power

Electronics Corp.

Simple Drive Requirement

SO-8 Compatible with Heatsink

Low On-resistance

RoHS Compliant & Halogen-Free

G

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

D

BV

DSS

R

DS(ON)

I

D

40V

5.5m

75A

D

S

D

D

D

Description

Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-effectiveness.

The PMPAK 5x6 package is special for DC-DC converters application

and the foot print is compatible with SO-8 with backside heat sink and

lower profile.

S

S

S

G

PMPAK 5x6

Absolute Maximum Ratings

Symbol

V

DS

V

GS

I

D

@T

C

=25

I

D

@T

A

=25

I

D

@T

A

=70

I

DM

P

D

@T

C

=25

P

D

@T

A

=25

E

AS

T

STG

T

J

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (Chip)

Continuous Drain Current

Pulsed Drain Current

1

3

Rating

40

+20

75

23.6

19

300

56.8

5

28.8

-55 to 150

-55 to 150

Units

V

V

A

A

A

A

W

W

mJ

Continuous Drain Current

3

Total Power Dissipation

Total Power Dissipation

Single Pulse Avalanche Energy

4

Storage Temperature Range

Operating Junction Temperature Range

Thermal Data

Symbol

Rthj-c

Rthj-a

Parameter

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient

3

Value

2.2

25

Units

/W

/W

Data & specifications subject to change without notice1

200911101

AP0504GMT-HF

Electrical Characteristics@T

j

=25

o

C(unless otherwise specified)

Symbol

BV

DSS

R

DS(ON)

Parameter

Drain-Source Breakdown Voltage

Static Drain-Source On-Resistance

2

Test Conditions

V

GS

=0V, I

D

=250uA

V

GS

=10V, I

D

=30A

V

GS

=4.5V, I

D

=20A

V

GS(th)

g

fs

I

DSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

C

iss

C

oss

C

rss

Gate Threshold Voltage

Forward Transconductance

Drain-Source Leakage Current

Gate-Source Leakage

Total Gate Charge

2

Gate-Source Charge

Gate-Drain ("Miller") Charge

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

2

Min.

40

-

-

1

-

-

-

-

-

-

-

-

-

-

-

-

-

Typ.

-

-

-

-

70

-

-

20

4

11

9

7

25

29

340

180

-

5.5

8

3

-

10

+100

32

-

-

-

-

-

-

-

-

V

m

m

V

S

uA

nA

nC

nC

nC

ns

ns

ns

ns

pF

pF

pF

V

DS

=V

GS

, I

D

=250uA

V

DS

=10V, I

D

=20A

V

DS

=40V, V

GS

=0V

V

GS

=+20V

I

D

=20A

V

DS

=20V

V

GS

=4.5V

V

DS

=20V

I

D

=1A

R

G

=3.3,V

GS

=10V

R

D

=20

V

GS

=0V

V

DS

=25V

f=1.0MHz

16402620

Source-Drain Diode

Symbol

V

SD

Parameter

Forward On Voltage

2

Test Conditions

I

S

=20A, V

GS

=0V

I

S

=10A,

V

GS

=0

V

,

dI/dt=100A/µs

Min.

-

-

-

Typ.

-

31

29

1.2

-

-

V

ns

nC

t

rr

Q

rr

Reverse Recovery Time

2

Reverse Recovery Charge

Notes:

width limited by Max. junction temperature

test

e mounted on 1 in

2

copper pad of FR4 board, t <10sec, 60

o

C/W at steady state.

ng T

j

=25C , V

DD

=30V , L=0.1mH , R

G

=25 , I

AS

=24A.

o

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.

APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED

HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

RELIABILITY, FUNCTION OR DESIGN.

2